DC, RF, HiPIMS, Pulsed DC

Reactive, non-reactiv, co-deposition

Polyteknik has build up an extensive knowledge of the sputtering process from in-house coating and complex build systems. We support our customers in the range from small scale advanced R&D process development to full scale customised production systems. Polyteknik has experience with a wide range of sputtering processes including among others: DC and RF sputtering HiPIMS, Pulsed or Bipolar Reactive sputtering processes Co-sputtering – co-deposition


– High step coverage – Medium pressure process – Wide range of alloys and compound materials

Sputtering is the primary alternative to evaporation for metal film deposition in e.g. microelectronic fabrication. The technique has better step coverage than evaporation and is much better at producing layers of compound materials and alloys. In sputtering applications high energy ions, in a plasma of an inert gas, strikes a target containing the material to be deposited. Because of the momentum exchange between the ions and the atoms in the target, material is ejected from the target. The amount of material ejected from each ion collision is dependent on the target material, yielding a highly material specific deposition rate. In the case of deposition of elemental metals, simple dc sputtering is usually favored. During deposition of insulating materials an RF plasma must be used.
By including reactive gasses e.g. oxygen in the plasma during the sputtering process, a thin film with atoms incorporated from the reactive gas can be achieved.

The sputtering process
A plasma is created from an inert gas, loaded into the vacuum chamber, by applying a high voltage between two electrodes on the magnetron. The plasma is concentrated right above the target material by magnets inside the magnetron. Atoms ejected from the target will deposit on all surfaces they strike and build up a thin film.

Have a look of our systems: Flextura Sputter or Flextura Cluster